This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit-rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics of IGBT MOSFET result in inefficient operations at high frequencies.Co–packaged IGBTs save space, and reduce assembly time and cost.
Features And Specifications Of MGW20N60D IGBT MOSFET Power Transistor:
- Type Designator: MGW20N60D
- Type of IGBT Channel: N-Channel
- Maximum Power Dissipation (Pc), W: 142W
- Maximum Collector-Emitter Voltage |Vce|, V: 600V
- Collector-Emitter saturation Voltage |Vcesat|, V: 2.3V
- Maximum Gate-Emitter Voltage |Veg|, V: 20V
- Maximum Collector Current |Ic|, A: 20A
- Maximum Junction Temperature (Tj), °C: 150
- Rise Time, nS: 59
- Maximum Collector Capacity (Cc), pF: 2280pF
- High Short Circuit Capability
- Soft Recovery Free Wheeling Diode is included in the package
Package Include:
- 1 x MGW20N60D IGBT IC
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