IRF740 MOSFET – N-Channel Transistor IRF740 is type of N-Channel enhancement mode power field effect transistors which are using planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation. The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU.
Features
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 10A
- Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
- Drain to Source Breakdown Voltage: 400V
- Drain Source Resistance (RDS) is 0.55 Ohms
- Rise time and fall time is 27nS and 24nS
- Available in To-220 package
Package Include:
- 1 x Irf740 n Channel Power Mosfet in Pakistan
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